P/N + Description + Content Search
Part Name(s) : NX5310 NX5310EH-AZ NX5310EK-AZ NX5310EK NX5310EH
California Eastern Laboratories.
Description : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE (Rev - 2006)
Part Name(s) : NX5315EH NX5315EH-AZ_
California Eastern Laboratories.
Description : 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Part Name(s) : NX5312 NX5312EH-AZ NX5312EK-AZ
California Eastern Laboratories.
Description : LASER DIODE
Part Name(s) : NX5315 NX5315EK-AZ NX5315EH-AZ
California Eastern Laboratories.
Description : NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
Part Name(s) : NX5323EH
California Eastern Laboratories.
Description : 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Part Name(s) : NX5323EH
NEC => Renesas Technology
Description : 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Part Name(s) : NX5317 NX5317EE-AZ NX5317EH-AZ
California Eastern Laboratories.
Description : 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Part Name(s) : NX5313 NX5313EH NX5313EK
Renesas Electronics
Description : 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Part Name(s) : NX6309GH NX6309GH-AZ
California Eastern Laboratories.
Description : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Part Name(s) : NX6308GH PL10692EJ03V0DS
Renesas Electronics
Description : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Part Name(s) : NX6309GH
Renesas Electronics
Description : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Part Name(s) : NX6308GH NX6308GH-AZ
California Eastern Laboratories.
Description : 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Part Name(s) : NX5311GK NX5311GH NX5311 NX5311S
California Eastern Laboratories.
Description : NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
Part Name(s) : NX5313 NX5313EH NX5313EK
California Eastern Laboratories.
Description : NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
Part Name(s) : NX6314EH NX6314EH-AZ
California Eastern Laboratories.
Description : LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
Part Name(s) : NX6314EH
Renesas Electronics
Description : LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
Part Name(s) : NX5322 NX5322EH NX5322EK
NEC => Renesas Technology
Description : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
Part Name(s) : NX5322 NX5322EH-AZ NX5322EK-AZ
California Eastern Laboratories.
Description : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
Part Name(s) : NX5321 NX5321EH NX5321EK
NEC => Renesas Technology
Description : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
Part Name(s) : NX5321 NX5321EH-AZ NX5321EK-AZ
California Eastern Laboratories.
Description : 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE